erlacher

Artur Erlacher, PhD
Physicist

Artur Erlacher investigates new fabrication methods for compound semiconductors and their applications for optical computing and high efficiency optoelectronic devices. His fields of interest are all-optical switching, optoelectronic devices design, thin-film technology, amorphous semiconductors and pulsed-laser deposition.

He received a high-school Diploma in Computer Science of the Technical Business College Villach, Austria in 1993 and continued his education at the Technical University of Graz, Austria. There he graduated as a Master of Science in Technical Physics.

In 2000 he visited the Virginia Tech University in Blacksburg, USA and Marquette University in Milwaukee, USA to exam the optical properties of polymere thin-films and endohedral fullerenes.

Since 2002 Artur Erlacher covers a research assistent position at Kottan-labs at the Bowling Green State University. As of August 2005 Artur has sucessfully completed the PhD. pogram in the Center for Photochemical Science.

Email: ae@dolpherl.com

Recent Publications in Refereed Journals:

(1) "Switch performance and electronic nature of photonic laser digitizing thin GaAs films on glass", B. Ullrich, A. Erlacher, and E. Danilov, Semicond. Sci. Technol. 19, L111-L114 (2004).

(2) "X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition", A. Erlacher, M. Ambrico, V. Capozzi, V. Augelli, H. Jaeger, and B. Ullrich, Semicond. Sci. Technol. 19, 1322-1324 (2004).

(3) "All-optical digitizing of laser transmission through thin-film GaAs on glass", A. Erlacher and B. Ullrich, Semicond. Sci. Technol. 19, L9–L12 (2004).

(4) "Low-power all-optical switch by superposition of red and green laser
irradiation in thin-film cadmium sulfide on glass", A. Erlacher, H. Miller, and B. Ullrich, J. Appl. Phys. 95, 2927-2929 (2004).

Conference Papers and Presentations:

(1) "Laser crossing in thin-film GaAs for all-optical computing realizations", A. Erlacher, B. Ullrich, in print for Proceedings for Optics and Photonics SPIE conference 2005.

(2) "Optical gate realization by laser crossing in thin-film semiconductors on glass", A. Erlacher, B. Ullrich, R. J. Konopinski, and H. J. Haugan, Proceedings of SPIE Vol. 5723, 179-186 (2005).

(3) "Absorption and photoconductivity properties of ZnTe thin-films formed by pulsed-laser deposition on glass", A. Erlacher, M. Ambrico, G. Perna, L. Schiavulli, T. Ligonzo, H. Jaeger, and B. Ullrich, Appl. Surf. Sci. 258, 402-405 (2005).

(4) "Absorption and photocurrent properties of low-temperature laser deposited thin-film GaAs on glass", A. Erlacher, M. Ambrico, G. Perna, L. Schiavulli, T. Ligonzo, H. Jaeger, and B. Ullrich, Proceedings of SPIE Vol. 5850, 1-7 (2004).

(5) "Opto-electronic mulitplexer realization by a GaAs/Si heterostructure formed by pulsed-laser deposition", B. Ullrich, A. Erlacher, T. G. Gerasimov, E. Y. Komarova, and H. Jaeger, Proceedings of SPIE Vol. 5359, 23-30 (2004).

(6) "The formation of GaAs/Si photodiodes by pulsed-laser deposition", B. Ullrich, A. Erlacher, and H. Jaeger, Proceedings of SPIE Vol. 5339, 365-373 (2004).

(7) "Preparation of thin GaAs on glass by pulsed-laser deposition", B. Ullrich, A. Erlacher, S. Yano, R. Schroeder, T. G. Gerasimov, and H. J. Haugan, Proceedings of SPIE Vol. 4977, 180-187 (2003).